Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub>. For standard polysilion the deposition takes place at a temperature of 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous polysilicon the deposition temperatures and thus the deposition rate are lower, and for boron and phosphorous doped polySi the deposition temperature is 600 <sup>o</sup>C - 620 <sup>o</sup>C depending on whether you use the 6" or the 4" polySi furnace. For phousphorous doped polySi the deposition rate is approximately ten times lower than for boron doped polySi. More process information about the process parameters can be found in the table below. | The reactive gas is silane (SiH<sub>4</sub>). The dopant for boron doped polySi is BCl<sub>3</sub> (6" polySi furnace) or B<sub>2</sub>H<sub>6</sub> (4" polySi furnace), and for phosphorous doped polySi the dopant is PH<sub>3</sub>. For standard polysilion the deposition takes place at a temperature of 620 <sup>o</sup>C and a pressure of 200-250 mTorr. For amorphous polysilicon the deposition temperatures and thus the deposition rate are lower, and for boron and phosphorous doped polySi the deposition temperature is 600 <sup>o</sup>C - 620 <sup>o</sup>C depending on whether you use the 6" or the 4" polySi furnace. For phousphorous doped polySi the deposition rate is approximately ten times lower than for boron doped polySi. More process information about the process parameters can be found in the table below. | ||
'''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:''' | '''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:''' | ||