Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using LPCVD TEOS: Difference between revisions
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TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | TEOS can be used as an alternative to thermally grown or PECVD oxide, it has a dielectric constant of 3.56 (For thermal oxide it is 3.46). Furthermore TEOS has a very high surface mobility enabling it to fill holes that has a large aspect ratio and leaving the surface quite smooth see figure 2, hence it also covers corners and side walls very well. | ||
'''The user manual(s), technical information and contact information can be found in LabManager:''' | |||
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=85 Furnace: LPCVD TEOS (B3)]''' | |||
==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ==Process parameters for the two standard deposition recipes on the TEOS furnace:== | ||