Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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!style="background:silver; color:black;" align=" | !style="background:silver; color:black;" align="center"|Purpose | ||
|style="background:LightGrey; color:black"|Deposition of silicon nitride | |style="background:LightGrey; color:black"|Deposition of silicon nitride | ||
|style="background:WhiteSmoke; color:black"|Stoichiometry: | |style="background:WhiteSmoke; color:black"|Stoichiometry: | ||
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SRN: Silicon rich nitride (low stress nitride) | SRN: Silicon rich nitride (low stress nitride) | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Run-to-run uniformity: <3 % | *Run-to-run uniformity: <3 % | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
|style="background:LightGrey; color:black"|Process Temperature | |style="background:LightGrey; color:black"|Process Temperature | ||
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*Ammonia (NH<sub>3</sub>): 20 sccm | *Ammonia (NH<sub>3</sub>): 20 sccm | ||
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!style="background:silver; color:black" align=" | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
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