Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Revision as of 15:38, 26 November 2012

Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).

The user manual(s), technical information and contact information can be found in LabManager:

Jipelec RTP

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose	RTP annealing
Performance
Process parameter range	Process Temperature	0-1000 ^oC Temperature ramp 1 ^oC/min to higher than >300 ^oC
	Process pressure	1 atm vacuum
	Gasses on the system	N₂
Substrates	Batch size	1 4" wafer (or 2" wafers) per run Small samples
Substrates	Substrate material allowed	A silicon carrier wafer with 1 µm oxide is always need (except for III-V materials) Silicon Silicon oxides Silicon nitrides Quartz Polysilicon Titan III-V materials (on graphite carrier) Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or send a mail to the Furnace group.

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 *0-1000 <sup>o</sup>C
-*High temperature ramp >300 <sup>o</sup>C
+*Temperature ramp 1 <sup>o</sup>C/min to higher than >300 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure