Specific Process Knowledge/Thermal Process/Jipelec RTP: Difference between revisions

Revision as of 15:23, 26 November 2012

Jipelec - Rapid Thermal Processing

The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).

The user manual(s), technical information and contact information can be found in LabManager:

Phosphor Drive-in

Overview of the performance of the Jipelec RTP and some process related parameters

Purpose	RTP annealing
Performance
Process parameter range	Process Temperature	0-1000 ^oC High temperature ramp >300 ^oC
	Process pressure	1 atm vacuum
	Gasses on the system	N₂
Substrates	Batch size	1 4" wafer (or 2" wafers) per run Small samples
Substrates	Substrate material allowed	Silicon Silicon oxides Silicon nitrides Quartz Polysilicon Titan III-V materials (on graphite carrier) Silicon wafers (new from the box or RCA cleaned) In doubt: look at the cross contamination chart or send a mail to the Furnace group.

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 [[Image:RTP_oven.jpg|300x300px|thumb|Jipelec RTP: Positioned in cleanroom 1]]
 The Jipelec is a rapid thermal processing oven. It should be used for fast and well-controlled annealing or alloying of samples. It is possible to use a pyrometer to control the temperature (of the carrier).
+'''The user manual(s), technical information and contact information can be found in LabManager:'''
+'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=164 Phosphor Drive-in]'''
 ==Overview of the performance of the Jipelec RTP and some process related parameters==