Specific Process Knowledge/Thermal Process/C4 Aluminium Anneal furnace

C4 Furnace Aluminium Anneal

C4 Furnace Aluminium Anneal: positioned in cleanroom 2

C4 Furnace Anneal is a Tempress horizontal furnace for annealing of silicon wafers with Aluminium.

This furnace is the lowest of the furnace tubes in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that contains aluminium. Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), technical information and contact information can be found in LabManager:

Aluminium Anneal (C4)

Process knowledge

• Annealing: look at the Annealing page

Overview of the performance of Aluminium Anneal furnace and some process related parameters

Purpose	Annealing	Annealing of wafers containing aluminium.
Performance	Film thickness
Process parameter range	Process Temperature	400-500 oC
	Process pressure	1 atm
	Gas flows	N2: 5 sccm O2: 5 sccm
Substrates	Batch size	1-30 4" wafer (or 2" wafers)
	Substrate material allowed	Silicon wafers with alluminium. Wafers are allowed after alluminium lift off or after alluminium etch and resiststrip in acetone