Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions
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== Overview of the standard processes: Processes A, B, C, D and SOI == | == Overview of the standard processes: Processes A, B, C, D and SOI == | ||
Revision as of 11:01, 22 October 2013
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Overview of the standard processes: Processes A, B, C, D and SOI
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
| Process name | Type | Purpose | Conditions during original runs | Best usage | |||
|---|---|---|---|---|---|---|---|
| Feature | Mask material | Etch load | Comments | ||||
| Process A | Bosch | Fast etch | 80 µm trench | Photo resist | 12-13 % on 6" wafer | ||
| Process B | Bosch | Fast etch | 30 µm diameter via | Photo resist | 12-13 % on 6" wafer | ||
| Equipment | Equipment 1 | Equipment 2 | |
|---|---|---|---|
| Purpose |
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| |
| Performance | Response 1 |
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| Response 2 |
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| Process parameter range | Parameter 1 |
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| Parameter 2 |
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| Substrates | Batch size |
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| Allowed materials |
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