Specific Process Knowledge/Etch/DRIE-Pegasus/StandardRecipes: Difference between revisions
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!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment | |||
|style="background:WhiteSmoke; color:black"|<b>Equipment 1</b> | |||
|style="background:WhiteSmoke; color:black"|<b>Equipment 2</b> | |||
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!style="background:silver; color:black;" align="center"|Purpose | |||
|style="background:LightGrey; color:black"| | |||
|style="background:WhiteSmoke; color:black"| | |||
*Purpose 1 | |||
*Purpose 2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Purpose 1 | |||
*Purpose 2 | |||
*Purpose 3 | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"|Response 1 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Performance range 1 | |||
*Performance range 2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Performance range 1 | |||
*Performance range 2 | |||
*Performance range 3 | |||
|- | |||
|style="background:LightGrey; color:black"|Response 2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Performance range | |||
|style="background:WhiteSmoke; color:black"| | |||
*Performance range | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | |||
|style="background:LightGrey; color:black"|Parameter 1 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Range | |||
|style="background:WhiteSmoke; color:black"| | |||
*Range | |||
|- | |||
|style="background:LightGrey; color:black"|Parameter 2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Range | |||
|style="background:WhiteSmoke; color:black"| | |||
*Range | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*<nowiki>#</nowiki> small samples | |||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
|style="background:WhiteSmoke; color:black"| | |||
*<nowiki>#</nowiki> small samples | |||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
|- | |||
| style="background:LightGrey; color:black"|Allowed materials | |||
|style="background:WhiteSmoke; color:black"| | |||
*Allowed material 1 | |||
*Allowed material 2 | |||
|style="background:WhiteSmoke; color:black"| | |||
*Allowed material 1 | |||
*Allowed material 2 | |||
*Allowed material 3 | |||
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|} | |} |
Revision as of 11:56, 26 November 2012
Overview of the standard processes: Processes A, B, C, D and SOI
The instrument was accepted on the basis of the performance of 5 processes. Below is a general comparison - to find more detailed information, go the web page for each process
Process name | Type | Purpose | Conditions during original runs | Best usage | |||
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Feature | Mask material | Etch load | Comments | ||||
Process A | Bosch | Fast etch | 80 µm trench | Photo resist | 12-13 % on 6" wafer | ||
Process B | Bosch | Fast etch | 30 µm diameter via | Photo resist | 12-13 % on 6" wafer |
Equipment | Equipment 1 | Equipment 2 | |
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Purpose |
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Performance | Response 1 |
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Response 2 |
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Process parameter range | Parameter 1 |
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Parameter 2 |
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Substrates | Batch size |
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Allowed materials |
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