Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

Revision as of 11:05, 26 November 2012

A1 Furnace Boron drive-in

A1 Boron drive in furnace: positioned in cleanroom 2

A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition, oxidation of the boron phase layer. Boron predeposition takes place in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted.

A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge

Boron drive-in: look at the Dope with Boron page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Overview of the performance of the boron drive-in furnace and some process related parameters

Purpose	Drive-in of boron, oxidation of silicon and boron phase layer and annealing of the oxide	Oxidation: Dry Wet: with torch (H₂+O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (takes too long to make it thicker) Wet SiO₂: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	O₂, H₂ and N₂
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) From A2 furnace directly (e.g. incl. Predep HF) In doubt: look at the cross contamination chart or send a mail to the Furnace group

@@ Line 24: / Line 24: @@
 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (takes too long to make it thicker)
+*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (takes too long to make it thicker)
-*Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker)
+*Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 39: / Line 39: @@
 |style="background:WhiteSmoke; color:black"|
-*O<sub>2</sub>,H<sub>2</sub> and N<sub>2</sub>
+*O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
@@ Line 50: / Line 50: @@
 *Silicon wafers (new from the box or RCA cleaned)
 *From A2 furnace directly (e.g. incl. Predep HF)
-*In doubt: look at the cross contamination sheet or ask one from the furnace team
+*In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group]
 |-
 |}