Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | ||
*Dry SiO<sub>2</sub>: | *Dry SiO<sub>2</sub>: 50 Å to ~2000 Å (takes too long to make it thicker) | ||
*Wet SiO<sub>2</sub>: | *Wet SiO<sub>2</sub>: 50 Å to ~3 µm (takes too long to make it thicker) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*O<sub>2</sub>,H<sub>2</sub> and N<sub>2</sub> | *O<sub>2</sub>, H<sub>2</sub> and N<sub>2</sub> | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
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*Silicon wafers (new from the box or RCA cleaned) | *Silicon wafers (new from the box or RCA cleaned) | ||
*From A2 furnace directly (e.g. incl. Predep HF) | *From A2 furnace directly (e.g. incl. Predep HF) | ||
*In doubt: look at the cross contamination | *In doubt: look at [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart] or send a mail to [mailto:furnace@danchip.dtu.dk the Furnace group] | ||
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