Specific Process Knowledge/Thermal Process/Dope with Boron: Difference between revisions
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==Dope with boron== | ==Dope with boron== | ||
The furnace A2 boron predep can be used to pre deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre deposit of boron is a diffusion process on the silicon wafers. | The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers. | ||
The concentration of boron in the wafer depends on the process temperature. | The concentration of boron in the wafer depends on the process temperature. | ||
Revision as of 11:33, 26 November 2012
Dope with boron
The furnace A2 boron predep can be used to pre-deposit silicon wafers with boron. The silicon wafers are positioned in a silicon carbide boat just next to wafers of boron nitride. Pre-deposit of boron is a diffusion process on the silicon wafers.
The concentration of boron in the wafer depends on the process temperature. The depth profile depends of the process time.
- Boron profiles from SIMS
-
1 hour -
6 hours -
16 hours
<gallery caption="Boron profiles from SIMS " widths="200px" heights="200px" perrow="3"> image:borDiffusionDepthtable.jpg image:borDiffusionDepthplot.jpg