Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
New page: PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace. Tin can be deposited by e-beam evaporation. In the chart below you can compare the different depositio... |
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|2Å/s to 15Å/s | |2Å/s to 15Å/s | ||
|1Å/s to 5Å/s | |1Å/s to 5Å/s | ||
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== Sputtered Silicon in the Alcatel== | |||
{| border="1" cellspacing="0" cellpadding="4" | |||
!The parameter(s) changed | |||
!New value(s) | |||
!Deposition rate | |||
|- | |||
|Standard parameters | |||
|None | |||
| | |||
|- | |||
|Power | |||
|400W | |||
|3.8 Å/s | |||
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|} | |} | ||
Revision as of 08:49, 3 December 2007
PolySilicon can be sputtered in Alcatel and be deposited in the PolySilicon furnace.
Tin can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| Sputter (Alcatel) | Furnace PolySi | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | Ar ion bombartment |
| Layer thickness | 10Å to 1µm | 10Å to 1500Å |
| Deposition rate | 2Å/s to 15Å/s | 1Å/s to 5Å/s |
Sputtered Silicon in the Alcatel
| The parameter(s) changed | New value(s) | Deposition rate |
|---|---|---|
| Standard parameters | None | |
| Power | 400W | 3.8 Å/s |