Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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* Good feature definition after etch. | * Good feature definition after etch. | ||
* Good end point detection by SIMS. | * Good end point detection by SIMS. | ||
* Burned resist: Lower current, 300 mA can limit resist burning | * Burned resist: Lower current, 300 mA can limit resist burning. Note this <b>will</b> affect pattern transfer. | ||
* Hare ears due to redeposition, thinner resist can limit the size. | * Hare ears due to redeposition, thinner resist can limit the size. | ||