Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Conclusions=== | ===Conclusions=== | ||
* | * Etch rate around 20 nm/min with optimized recipe. | ||
* Good feature definition after etch. | |||
* Good end point detection by SIMS. | |||
* Burned resist: Lower current, 300 mA can limit resist burning. | |||
* Hare ears due to redeposition, thinner resist can limit the size. | |||