Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions

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Revision as of 13:38, 8 November 2012

Results for Si etching in the IBE

Made by Kristian Hagsted Rasmussen @ Nanotech <br\>

Best recipe with respect to the etch profile and low redeposition:

Parameter Best Si etching recipe so fare
Neutalizer current [mA] 450
RF Power [W] 1200
Beam current [mA] 400
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 5
Results vvv
Etch rate [nm/min] 18