Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
| Line 86: | Line 86: | ||
*SiH<sub>4</sub>: 80 sccm | *SiH<sub>4</sub>: 80 sccm | ||
*B<sub>2</sub>H<sub>6</sub>: 7 sccm | *B<sub>2</sub>H<sub>6</sub>: 7 sccm | ||
*PH<sub> | *PH<sub>3</sub>: 7 sccm | ||
The silane (SiH<sub>4</sub>) flow depends on the actual process | The silane (SiH<sub>4</sub>) flow depends on the actual process | ||
|- | |- | ||