Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions

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 *Standard polySi
 *Amorphous polySi
-*Boron doped polySi (B<math>_2</math>H<math>_6</math> dopant)
+*Boron doped polySi (B<sub>2</sub>H<sub>6</sub> dopant)
 *Phosphorus doped polySi
 |-
@@ Line 81: / Line 81: @@
 |style="background:WhiteSmoke; color:black"|
 " furnace:
-*SiH<math>_4</math>: 50-70 sccm
+*SiH<sub>4</sub>: 50-70 sccm
-*BCl<math>_1</math>: 1 sccm
+*BCl<sub>1</sub>: 1 sccm
 " furnace:
-*SiH<math>_4</math>: 80 sccm
+*SiH<sub>4</sub>: 80 sccm
-*B<math>_2</math>H<math>_6</math>: 7 sccm
+*B<sub>2</sub>H<sub>6</sub>: 7 sccm
-*PH<math>_1</math>: 7 sccm
+*PH<sub>1</sub>: 7 sccm
-The silane (SiH<math>_4</math>) flow depends on the actual process
+The silane (SiH<sub>4</sub>) flow depends on the actual process
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates