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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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danchip, nanotech
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Khr (talk | contribs)
danchip, nanotech
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|Neutalizer current [mA]
|Neutalizer current [mA]
|450
|450
|rowspan="8"|[[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]]
|rowspan="10"|[[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]]
|-
|-
|RF Power [W]
|RF Power [W]
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