Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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 ===Process parameters for the acceptance test===
 To find the optimal parameters, Design of Experiments was applied, with the intervals shown on the figure below.
-{|
 {| align=left border="2" cellspacing="2" cellpadding="3"
 !Parameter
 !Ti etch acceptance
+!DoE
 |-
 |Neutalizer current [mA]
 |450
+|rowspan="8"|[[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]]
 |-
 |RF Power [W]
@@ Line 38: / Line 39: @@
 |37.5
 |-
-|}
-[[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]]
 |}