Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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===Process parameters for the acceptance test=== | ===Process parameters for the acceptance test=== | ||
To find the optimal parameters, Design of Experiments was applied, with the intervals shown on the figure below. | To find the optimal parameters, Design of Experiments was applied, with the intervals shown on the figure below. | ||
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!Parameter | !Parameter | ||
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[[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]] | [[image:KHARA-MLS-DoE.png|450x450px|thumb|center|Design of Experiments setup used to find optimal etch of the multi layers stack. Centerpoints are not shown on the figure. The parameters varied were Beam current, Beam Voltage, Accelerator Voltage, and Incident Angle.]] | ||
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===Some SEM profile images of the etched stacks=== | ===Some SEM profile images of the etched stacks=== | ||