Specific Process Knowledge/Etch/Etching of Titanium: Difference between revisions
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==Etching of Chromium== | |||
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions. | |||
*[[Specific Process Knowledge/Etch/Wet Chromium Etch|Etching of Cr by wet etch]] | |||
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium|Etching of Cr by dry etch]] | |||
*[[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|Sputtering of Cr]] | |||
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==Comparison of Aluminium Etch Metodes== | |||
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![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 1]] | |||
![[Specific Process Knowledge/Etch/Wet Chromium Etch|Cr wet etch 2]] | |||
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]] | |||
![[Specific_Process_Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE (Ionfab300+)]] | |||
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!Generel description | |||
|Wet etch of Cr that you need to mix your self | |||
|Wet etch of Cr premixed | |||
|Dry plasma etch of Cr | |||
|Sputtering of Cr - pure physical etch | |||
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!Etch rate range | |||
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*~40-100nm/min | |||
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*~?nm/min | |||
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*~14 nm/min (depending on features size and etch load) | |||
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*~30nm/min (not tested yet) | |||
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!Etch profile | |||
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*Isotropic | |||
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*Isotropic | |||
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*Anisotropic (vertical sidewalls) | |||
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*Anisotropic (angles sidewalls, typical around 70 dg) | |||
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!Substrate size | |||
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*Any size and number that can go inside the beaker in use | |||
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*Any size and number that can go inside the beaker in use | |||
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*smaller pieces on a carrier wafer | |||
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers) | |||
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers) | |||
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Smaller pieces glued to carrier wafer | |||
*<nowiki>#</nowiki>1 50mm wafer | |||
*<nowiki>#</nowiki>1 100mm wafer | |||
*<nowiki>#</nowiki>1 150mm wafer | |||
*<nowiki>#</nowiki>1 200mm wafer | |||
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!'''Allowed materials''' | |||
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
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No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals | |||
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*Silicon | |||
*Quartz/fused silica | |||
*Photoresist/e-beam resist | |||
*PolySilicon, | |||
*Silicon oxide | |||
*Silicon (oxy)nitride | |||
*Aluminium | |||
*Titanium | |||
*Chromium | |||
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*Silicon | |||
*Silicon oxides | |||
*Silicon nitrides | |||
*Metals from the +list | |||
*Metals from the -list | |||
*Alloys from the above list | |||
*Stainless steel | |||
*Glass | |||
*III-V materials | |||
*Resists | |||
*Polymers | |||
*Capton tape | |||
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Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with [[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP]] using Chlorine chemistry or with [[Specific Process Knowledge/Etch/IBE/IBSD Ionfab 300|IBE]] by sputtering with Ar ions. | ||
Revision as of 14:52, 12 March 2013
THIS PAGE IS UNDER CONSTRUCTION
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Etching of Chromium
Etching of chromium can be done either by wet etch, dry etch or by sputtering with ions.
Comparison of Aluminium Etch Metodes
Cr wet etch 1 | Cr wet etch 2 | ICP metal | IBE (Ionfab300+) | |
---|---|---|---|---|
Generel description | Wet etch of Cr that you need to mix your self | Wet etch of Cr premixed | Dry plasma etch of Cr | Sputtering of Cr - pure physical etch |
Etch rate range |
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|
Etch profile |
|
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|
Substrate size |
|
|
|
Smaller pieces glued to carrier wafer
|
Allowed materials |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals |
|
|
Ething of Titanium can be done either wet or dry. For wet etching please see below on this page. Dry etching can be done either with ICP using Chlorine chemistry or with IBE by sputtering with Ar ions.
Wet etching of Titanium
We have two solutions for wet titanium etching:
- BHF
- Cold RCA1
Do it by making your own set up in a beaker in a fume hood - preferably in cleanroom 2 or 4. BHF etching can also take place in the PP-etch bath in the fume hood in cleanroom 2.
Comparing the two solutions
BHF | Cold RCA1 | |
---|---|---|
General description | Etch of titanium with or without photoresist mask. | Etch of titanium (as stripper or with eagle resist). |
Chemical solution | HF:NH4F | NH3OH:H2O2:H2O - 1:1:5 |
Process temperature | Room temperature | Room temperature |
Possible masking materials |
Photoresist (1.5 µm AZ5214E) |
Eagle resist |
Etch rate |
Not known (it bubbles while etching) |
Not known |
Batch size |
1-5 4" in beaker 1-25 wafers at a time in PP-etch bath |
1-5 4" wafer at a time |
Etch bath | Beaker or PP-etch bath in the fume hood in cleanroom 2. | Beaker |
Allowed materials |
No restrictions when used in beaker or PP-etch bath in the fume hood in cleanroom 2. Make a note on the beaker of which materials have been processed. |
No restrictions when used in beaker. Make a note on the beaker of which materials have been processed. |
Dry etching of titanium
See the ICP Metal Etch page.