Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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==Results of acceptance test no. 11== | ==Results of acceptance test no. 11== | ||
Sample:120 nm nitride on 110 nm oxide on a silicon substrate | Sample: 120 nm nitride on 110 nm oxide on a silicon substrate | ||
Measurement:Measurements of multiple stacks | Measurement: Measurements of multiple stacks | ||
Acceptance criteria: Within ±2% on each layer from an ellipsometer measurement (SiO2: 112nm, Si3N4: 139nm) | Acceptance criteria: Within ±2% on each layer from an ellipsometer measurement (SiO2: 112nm, Si3N4: 139nm) | ||