Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. The furnace is the only one there can handel 6" wafer.
C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. The furnace is the only one there can handel 6" wafer.


This furnace is the first furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please ask one from the process engineer team.
This furnace is the first furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 cross contamination chart]. If you are in doubt, please send a mail to [mailto:furnace@danchip.dtu.dk furnace@danchip.dtu.dk].
 
'''The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:'''
 
'''[http://www.labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=87 Anneal-oxide (C1)]'''
 


==Process knowledge==
==Process knowledge==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
<br clear="all" />
 


==Overview of the performance of Anneal Oxide furnace and some process related parameters==
==Overview of the performance of Anneal Oxide furnace and some process related parameters==


{| border="2" cellspacing="0" cellpadding="10"  
{| border="2" cellspacing="0" cellpadding="0"  
|-
|-
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="center"|Purpose  
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:LightGrey; color:black"|Oxidation and annealing  
|style="background:WhiteSmoke; color:black"|Oxidation:
|style="background:WhiteSmoke; color:black"|Oxidation:
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*Wet: with bubbler (water steam + N<sub>2</sub>)
*Wet: with bubbler (water steam + N<sub>2</sub>)
|-
|-
!style="background:silver; color:black" align="left"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process Temperature
|style="background:LightGrey; color:black"|Process Temperature
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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*Wet oxidation: N<sub>2</sub>:5 sccm
*Wet oxidation: N<sub>2</sub>:5 sccm
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon wafers (new from the box or RCA cleaned)
*Silicon wafers (new from the box or RCA cleaned)
**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
*Quartz wafers (RCA cleaned)
*Quartz wafers (RCA cleaned)
*From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
*From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
|-  
|-  
|}
|}

Revision as of 14:18, 26 November 2012

C1 Furnace Anneal Oxide

C1 Furnace Anneal Oxide: positioned in cleanroom 2

C1 Furnace Anneal Oxide is a Tempress horizontal furnace for oxidation and annealing of silicon wafers. The furnace is the only one there can handel 6" wafer.

This furnace is the first furnace tube in the furnace C-stack positioned in cleanroom 2. In this furnace it is allowed to enter wafers that comes directly from PECVD1 (assuming they were very clean when entering PECVD1). Check the cross contamination chart. If you are in doubt, please send a mail to furnace@danchip.dtu.dk.

The user manual(s), quality control procedure(s) and results, user APV(s), technical information and contact information can be found in LabManager:

Anneal-oxide (C1)


Process knowledge


Overview of the performance of Anneal Oxide furnace and some process related parameters

Purpose Oxidation and annealing Oxidation:
  • Dry
  • Wet: with bubbler (water steam + N2)
Performance Film thickness
  • Dry SiO2: 50Å to ~2000Å (takes too long to make it thicker)
  • Wet SiO2: 50Å to ~5µm ((takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gas flows
  • Annealing: N2:5 sccm
  • Dry oxidation: O2:5 sccm
  • Wet oxidation: N2:5 sccm
Substrates Batch size
  • 1-30 4" and 6" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
  • Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
  • Quartz wafers (RCA cleaned)
  • From PECVD1 directly (assuming they fulfilled the above before entering the PECVD1)
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