Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions
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[[Image:A1.JPG|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | [[Image:A1.JPG|thumb|300x300px|A1 Boron drive in furnace: positioned in cleanroom 2]] | ||
A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a | A1 Furnace boron drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of boron after a predeposition, oxidation of the boron phase layer. Boron predeposition takes place in the A2 Furnace boron pre-dep. It can also be used for drive in of boron which has been ion implanted. | ||
A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace | A1 is the top furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C2 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check [http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1250 the cross contamination chart]. If you are in doubt, please ask one from the furnace team. | ||
==Process knowledge== | ==Process knowledge== | ||