Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Annealing== | ==Annealing== | ||
At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | At Danchip we have seven furnaces and an RTP for annealing: A1, A3, C1, C2, C3, C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | ||
*Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP | *Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP | ||
*Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces: | *Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C1 and C3. | ||
==Comparison of the seven annealing equipments== | ==Comparison of the seven annealing equipments== | ||