Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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|Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing. | |Drive-in of boron deposited in the boron pre-dep furnace(A2) or drive-in of ion implanted boron. Can also be used for oxidation.||Drive-in of phosphorous deposited in the phosphorous pre-dep furnace(A2) or drive-in of ion implanted phosphorous. Can also be used for oxidation.||Annealing and oxidation of wafers from the B-stack and PECVD1. At the moment also used for general annealing and oxidation of 6" wafers.||Oxidation of gate-oxide and other especially clean oxides.||Annealing and oxidation of wafers from NIL.||Annealing of wafers with aluminium.||Annealing and oxidation of any material.||Rapid thermal annealing. | ||
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! Annealing with N< | ! Annealing with N<sub>2</sub> | ||
|x||x||x||x (with special permission)||x||x||x||x | |x||x||x||x (with special permission)||x||x||x||x | ||
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!Wet annealing with bubler (water steam + N< | !Wet annealing with bubler (water steam + N<sub>_2</sub>) | ||
|.||.||x||.||x||.||.||. | |.||.||x||.||x||.||.||. | ||
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