Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
| Line 2: | Line 2: | ||
At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | At Danchip we have seven furnaces and an RTP for annealing: A1,A3,C1,C2,C3,C4, noble furnace and RTP. Annealing normally takes place in an N<sub>2</sub> atmosphere. PECVD PBSG is annealed in an wet atmosphere which will also oxidize the silicon substrate. | ||
*Anneal with N< | *Anneal with N<sub>2</sub> can be done in furnaces:A1,A3,C1,C2,C3,C4, noble furnace and RTP | ||
*Wet anneal with H< | *Wet anneal with H<sub>2</sub>O in a bubbler can be done in furnaces:C2 and C3. | ||
==Comparison of the seven annealing equipments== | ==Comparison of the seven annealing equipments== | ||