Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

From LabAdviser
Kn (talk | contribs)
No edit summary
Kn (talk | contribs)
No edit summary
Line 1: Line 1:
Copper can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
 
'''Feedback to this page''': '''[mailto:pvd@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Copper click here]'''
 
== Deposition of Cu ==
Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.




{| border="1" cellspacing="0" cellpadding="3"  
{| border="1" cellspacing="0" cellpadding="3"  
|-style="background:silver; color:black"
!  
!  
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])
! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])


|-  
|-  
| Batch size
|-style="background:WhiteSmoke; color:black"
 
! Batch size
|
|
*Up to 1x4" wafers
*Up to 1x4" wafers
Line 17: Line 25:
* 4x2" wafers  
* 4x2" wafers  
|-
|-
| Pre-clean
|-style="background:LightGrey; color:black"
 
!Pre-clean
|RF Ar clean
|RF Ar clean
|RF Ar clean
|RF Ar clean


|-
|-
| Layer thickness
|-style="background:WhiteSmoke; color:black"
 
!Layer thickness
|10Å to 0.5µm  
|10Å to 0.5µm  
|
|
Line 28: Line 40:


|-
|-
| Deposition rate
|-style="background:LightGrey; color:black"
 
! Deposition rate
|2Å/s to 15Å/s
|2Å/s to 15Å/s
|
|

Revision as of 11:44, 1 March 2013

Feedback to this page: click here

Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering . In the chart below you can compare the different deposition equipment.


E-beam evaporation (Alcatel) Sputter deposition (PVD co-sputter/evaporation)
Batch size
  • Up to 1x4" wafers
  • smaller pieces
  • 4x6" wafers or
  • 4x4" wafers or
  • 4x2" wafers
Pre-clean RF Ar clean RF Ar clean
Layer thickness 10Å to 0.5µm

10Å to 0.5µm

Deposition rate 2Å/s to 15Å/s

Depending on process parameters


Studies of Cu deposition processes

Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel


Cu sputtering in (PVD co-sputter/evaporation)

Process parameters are listed here: Cu sputter in PVD co-sputter/evaporation