Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
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[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel'' | [[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with Alcatel'' | ||
== Cu sputtering in ([[Specific Process Knowledge/Thin film deposition/Multisource PVD|PVD co-sputter/evaporation]])== | |||
Process parameters are listed here: [[Specific Process Knowledge/Thin film deposition/Multisource PVD/Cu|Cu sputter in PVD co-sputter/evaporation]] | |||
Revision as of 14:02, 2 October 2012
Copper can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | Sputter deposition (PVD co-sputter/evaporation) | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | RF Ar clean |
| Layer thickness | 10Å to 0.5µm |
10Å to 0.5µm |
| Deposition rate | 2Å/s to 15Å/s |
Depending on process parameters |
Studies of Cu deposition processes
Roughness of Cu layers - Roughness of Cu layers deposited with Alcatel
Cu sputtering in (PVD co-sputter/evaporation)
Process parameters are listed here: Cu sputter in PVD co-sputter/evaporation