Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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[[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe trenching]] | [[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe trenching]] | ||
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===Endpoint detection with SIMS=== | |||
[[image:IBE magnetic stack A19-13.jpg|300x300px|thumb|center|Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile ~78°]] | |||
End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. | |||
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen. | |||
Revision as of 14:10, 27 September 2012
Results of Design of Experiments optimization of magnetic stack etching
Process parameters for the acceptance test
| Parameter | Ti etch acceptance |
|---|---|
| Neutalizer current [mA] | 450 |
| RF Power [W] | 800 |
| Beam current [mA] | 400 |
| Beam voltage [V] | 500 |
| Beam accelerator voltage | 500 |
| Ar flow to neutralizer [sccm] | 5.0 |
| Ar flow to beam [sccm] | 10.0 |
| Rotation speed [rpm] | 20 |
| Stage angle [degrees] | 5 |
| Helium backside cooling [Torr] | 37.5 |
Some SEM profile images of the etched stacks
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Endpoint detection with SIMS
End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min.
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.