Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
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==Results of Design of Experiments optimization of magnetic stack etching== | ==Results of Design of Experiments optimization of magnetic stack etching== | ||
===Process parameters for the acceptance test=== | |||
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Revision as of 14:09, 27 September 2012
Results of Design of Experiments optimization of magnetic stack etching
Process parameters for the acceptance test
| Parameter | Ti etch acceptance |
|---|---|
| Neutalizer current [mA] | 450 |
| RF Power [W] | 800 |
| Beam current [mA] | 400 |
| Beam voltage [V] | 500 |
| Beam accelerator voltage | 500 |
| Ar flow to neutralizer [sccm] | 5.0 |
| Ar flow to beam [sccm] | 10.0 |
| Rotation speed [rpm] | 20 |
| Stage angle [degrees] | 5 |
| Helium backside cooling [Torr] | 37.5 |
Some SEM profile images of the etched stacks
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