Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions
No edit summary |
No edit summary |
||
| Line 1: | Line 1: | ||
==Results of Design of Experiments optimization of magnetic stack etching== | |||
====Process parameters for the acceptance test==== | ====Process parameters for the acceptance test==== | ||
{| border="2" cellspacing="2" cellpadding="3" | {| border="2" cellspacing="2" cellpadding="3" | ||
Revision as of 14:08, 27 September 2012
Results of Design of Experiments optimization of magnetic stack etching
Process parameters for the acceptance test
| Parameter | Ti etch acceptance |
|---|---|
| Neutalizer current [mA] | 450 |
| RF Power [W] | 800 |
| Beam current [mA] | 400 |
| Beam voltage [V] | 500 |
| Beam accelerator voltage | 500 |
| Ar flow to neutralizer [sccm] | 5.0 |
| Ar flow to beam [sccm] | 10.0 |
| Rotation speed [rpm] | 20 |
| Stage angle [degrees] | 5 |
| Helium backside cooling [Torr] | 37.5 |
Some SEM profile images of the etched stacks
 |
 |
 |
|---|