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Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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danchip, nanotech
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Khr (talk | contribs)
danchip, nanotech
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End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min.
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.
==Results from the acceptance test in February 2011==
====Process parameters for the acceptance test====
====Process parameters for the acceptance test====
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