Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min.
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.
==Results from the acceptance test in February 2011==
====Process parameters for the acceptance test====
====Process parameters for the acceptance test====
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Revision as of 14:08, 27 September 2012

Process parameters for the acceptance test

Parameter Ti etch acceptance
Neutalizer current [mA] 450
RF Power [W] 800
Beam current [mA] 400
Beam voltage [V] 500
Beam accelerator voltage 500
Ar flow to neutralizer [sccm] 5.0
Ar flow to beam [sccm] 10.0
Rotation speed [rpm] 20
Stage angle [degrees] 5
Helium backside cooling [Torr] 37.5

Some SEM profile images of the etched stacks

Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile ~78°
Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe footing
Etched magnetic stack with pool structure transfer. Chosen etch parameters result in severe trenching
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