Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch: Difference between revisions

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 [[image:IBE magnetic stack A19-13.jpg|300x300px|thumb|center|Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile ~78°]]
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-[[image:IBE acceptance Ti S10-5.jpg|300x300px|thumb|center|Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.]]
+[[image:IBE magnetic stack A16-13.jpg|300x300px|thumb|center|]]
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-[[image:IBE acceptance Ti S7 5.jpg|300x300px|thumb|center|Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg ]]
+[[image:IBE magnetic stack A3-13.jpg|300x300px|thumb|center|]]
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