Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE magnetic stack etch

End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min. Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.

Results from the acceptance test in February 2011

Process parameters for the acceptance test

Parameter	Ti etch acceptance
Neutalizer current [mA]	450
RF Power [W]	800
Beam current [mA]	400
Beam voltage [V]	500
Beam accelerator voltage	500
Ar flow to neutralizer [sccm]	5.0
Ar flow to beam [sccm]	10.0
Rotation speed [rpm]	20
Stage angle [degrees]	5
Helium backside cooling [Torr]	37.5

Some SEM profile images of the etched Ti

Magnetic stack of Ta/MnIr/NiFe/Ta/Tao/Ta/MnIr/NiFe/Ta. Redeposition of etched material at photo resist. Profile ~78°	Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.	Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg