====Process parameters for the acceptance test====
====Process parameters for the acceptance test====
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Revision as of 12:44, 27 September 2012
End point detection is achieved by SIMS, and the etch rate is approximately 25 Nm/min.
Resist stripping can be hard due to burned resist, to remedy this try to lover the current; this will though chance the sidewall angle. For help, discussion and further info please contact Kristian Hagsted Rasmussen.
Results from the acceptance test in February 2011
Process parameters for the acceptance test
Parameter
Ti etch acceptance
Neutalizer current [mA]
550
RF Power [W]
1200
Beam current [mA]
500
Beam voltage [V]
600
Beam accelerator voltage
400
Ar flow to neutralizer [sccm]
6.0
Ar flow to beam [sccm]
6.0
Rotation speed [rpm]
20
Stage angle [degrees]
20
Some SEM profile images of the etched Ti
Ti s10-4: 270nm deep - 500nm line. all zep has gone. Profile: ~65 dg.
Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.
Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg
