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| ==Results from the acceptance test in February 2011== | | ==Results from the acceptance test in February 2011== |
| '''Acceptance test for Ti etch:'''
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| !style="background:silver; color:black;" align="left"|.
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| |style="background:WhiteSmoke; color:black"|'''Acceptance Criteria'''
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| '''Acceptance Results'''
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| |-
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| !style="background:silver; color:black;" align="left"|Substrate information
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| |style="background:WhiteSmoke; color:black"|
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| *50 mm SSP Si wafer
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| *525 µm thick
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| *Supplied by Danchip
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| |.
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| |-
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| !style="background:silver; color:black" align="left" valign="top" |Material to be etched
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| |style="background:WhiteSmoke; color:black"|
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| *E-beam deposited Ti
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| |.
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| |-
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| !style="background:silver; color:black" align="left" valign="top" rowspan="1"|Mask information
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| |style="background:WhiteSmoke; color:black"|
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| *E-beam resist mask:
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| # 400nm of spin coated ZEP520A e-beam resist
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| #Patterned by E-beam lithography
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| |.
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Features to be etched
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| |style="background:WhiteSmoke; color:black"|
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| *300nm - 3µm dots and lines + a square of 200µmx200µm
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| |.
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Etch depth
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| |style="background:WhiteSmoke; color:black"|
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| *300nm
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| *~270 nm
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Etch rate
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| |style="background:WhiteSmoke; color:black"|
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| *>80nm/min
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| *22nm/min +- 0.3nm/min (one standard deviation)
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
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| |style="background:WhiteSmoke; color:black"|
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| *<+-2%
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| *+-(0.2% +-0.2%)
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Reproducibility
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| |style="background:WhiteSmoke; color:black"|
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| *<+-2%
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| *+-(0.8% +-0.5%)
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Selectivity (Au etch rate/ZEP etch rate)
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| |style="background:WhiteSmoke; color:black"|
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| *At least 1:1
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| *0.7:1
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| |-
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| !style="background:silver; color:black" align="left" valign="top"|Etch profile
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| |style="background:WhiteSmoke; color:black"|
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| *70-90dg.
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| *~65dg @270nm
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| *~77dg @123nm
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| |}
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| ====Process parameters for the acceptance test==== | | ====Process parameters for the acceptance test==== |
| {| border="2" cellspacing="2" cellpadding="3" | | {| border="2" cellspacing="2" cellpadding="3" |
