Specific Process Knowledge/Thin film deposition: Difference between revisions
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=== Metals/elements === | === Metals/elements === | ||
{| border="1" cellspacing="0" cellpadding=" | {| border="1" cellspacing="0" cellpadding="8" | ||
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|Period/Group | |||
|IVB | |||
|VB | |||
|VIB | |||
|VIIIB | |||
|IB | |||
|IIIA | |||
|IVA | |||
|- | |||
|3 | |||
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|[[/Deposition of Aluminium|13 Al Aluminium]] | |[[/Deposition of Aluminium|13 Al Aluminium]] | ||
|[[/Deposition of Silicon|14 Si Silicon]] | |[[/Deposition of Silicon|14 Si Silicon]] | ||
|- | |- | ||
|4 | |||
|[[/Deposition of Titanium|22 Ti Titanium]] | |[[/Deposition of Titanium|22 Ti Titanium]] | ||
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|[[/Deposition of Tin|50 Sn Tin]] | |[[/Deposition of Tin|50 Sn Tin]] | ||
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|6 | |||
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|[[/Deposition of Tantalum|73 Ta Tantalum]] | |[[/Deposition of Tantalum|73 Ta Tantalum]] |
Revision as of 09:51, 20 November 2007
Choose material to deposit
Metals/elements
Period/Group | IVB | VB | VIB | VIIIB | IB | IIIA | IVA |
3 | 13 Al Aluminium | 14 Si Silicon | |||||
4 | 22 Ti Titanium | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | |||
5 | 46 Pd Palladium | 47 Ag Silver | 50 Sn Tin | ||||
6 | 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold |
Alloys
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermical evaporator
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition