Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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== Development of switched nanoetch process ==
== Development of switched nanoetch process ==


On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus. The substrates are 6" wafers with
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.  


{| border="1" cellspacing="1" cellpadding="1" style="text-align:center;"
 
!Recipe
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
! colspan="2" align="center"| Nanobosch1
|+ '''Process parameters'''
! colspan="2" align="center"| Nanobosch2
! colspan="2" align="center"| Nanobosch3
! colspan="2" align="center"| Nanobosch4
! colspan="2" align="center"| Nanobosch5
|-
|-
! Cycle
! rowspan="2" width="100"| Recipe
! Etch
! rowspan="2" width="20"| Step
! Dep
! rowspan="2" width="20"| Temp.
! Etch
! colspan="6" | Deposition step
! Dep
! colspan="7" | Etch step
! Etch
! colspan="2" | Process observations
! Dep
! Etch
! Dep
! Etch
! Dep
|-
|-
!Cycle time (secs)
! width="40" | Time
! width="40" | Pressure
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Time
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
! nanobosch6
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
! nb-1.0
| A
| 20
| 2.5
| 2.5
|
| 10
|
| 50
|
| 0
|
| 0
|
| 500
|
| 5.0
|
| 10
|
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
! nb-1.1
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 50
| 50
|
| 5
|
| 350
|
! 50
|
| LF+B100
|
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|
|
|
|-
|-
!SF<sub>6</sub> (sccm)
! nb-1.2
| A
| 20
| 2.5
| 10
| 50
| 50
| 0
| 0
|
|
|
|
|
|
|
|
|-
!O<sub>2</sub> (sccm)
| 5
| 0
| 0
|
|
|
|
|
|
|
|
|-
! Coil power (W)
| 350
| 500
| 500
|
| 5.0
|
| 10
|
| 50
|
| 50
|
| 5
|
! 500
|
| 50
|
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
!Platen power (W)
! barcstrip
| A
| 20
|
|
|
|
|
|
| 30
| 30
| 4 (3@15)
| 0
| 0
| 0
|
| 40
|
! 200
|
| 20
|
| LF+B100
|
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|
|
|
|-
|-
! Pressure (mtorr)
! nanobosch7
| A
| 20
| 2.5
| 10
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 10
|
| 40
|
| 60
|
| 5
|
| 350
|
| 30
|
| LF+B100
|
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|
|-
|-
! Temperature (degs C)
 
| colspan="2" align="center"| 20
 
| colspan="2" align="center"|
| colspan="2" align="center"|
| colspan="2" align="center"|
| colspan="2" align="center"|
|-
! Duration
| colspan="2" align="center"| 60 cyc / 7:30
| colspan="2" align="center"|
| colspan="2" align="center"|
| colspan="2" align="center"|
| colspan="2" align="center"|
|-
! colspan="11" align="center"| Etch rates (nm/min)
|-
| Averages||.||.||.||.||.||.||.||.||.|
|-
| Std. Dev||.||.||.||.||.||.||.||.||.|
|-
! colspan="10" align="center"| Zep etch rate (nm/min)
|-
|  Averages||.||.||.||.||.||.||.||.||.|
|-
! colspan="10" align="center"| Sidewall angle (degrees)
|-
| Averages||.||.||.||.||.||.||.||.||.|
|-
| Std. Dev||.||.||.||.||.||.||.||.||.|
|-
! colspan="10" align="center"| CD loss (nm pr edge)
|-
| Averages||.||.||.||.||.||.||.||.||.|
|-
| Std. Dev||.||.||.||.||.||.||.||.||.|
|-
! colspan="10" align="center"| Bowing (nm)
|-
| Averages||.||.||.||.||.||.||.||.||.|
|-
| Std. Dev||.||.||.||.||.||.||.||.||.|
|-
! colspan="10" align="center"| Bottom curvature
|-
| Averages||.||.||.||.||.||.||.||.||.|
|-
| Std. Dev||.||.||.||.||.||.||.||.||.|
|-
|-
! Images
!       <!-- recipe name -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano10|Images]]
|       <!-- step -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano11|Images]]
|       <!-- chiller temperature -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano12|Images]]
|       <!-- dep time -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]]
|       <!-- dep pressure -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]]
|       <!-- dep C4F8 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|       <!-- dep SF6 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|       <!-- dep O2 flow -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]
|       <!-- dep coil power -->
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|       <!-- etch time -->
|       <!-- etch pressure -->
|       <!-- etch C4F8 flow -->
|       <!-- etch SF6 flow -->
|       <!-- etch O2 flow -->
!      <!-- etch coil power -->
|       <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|-
|}
|}

Revision as of 13:58, 29 November 2012

Development of continuous nanoetch

Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (F) 600 (F) 800 (F) 600 (F) 800 (F) 800 (F) 800 (F) 800 (F) 800 (F)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148
Std. Dev 36 29 37 20 9 9 9 8 6
Zep etch rate (nm/min)
172 95 94 69 67 101 65 55
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90
Std. Dev 1 1 0 1 0 0 1 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24
Std. Dev 12 10 11 14 15 15 16 15 21
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0
Std. Dev 7 6 4 3 2 2 2 3 1
Bottom curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39
Std. Dev 5 7 4 9 10 10 9 8 9
Images Images Images Images Images Images Images Images Images Images

Development of switched nanoetch process

On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.


Process parameters
Recipe Step Temp. Deposition step Etch step Process observations
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen Hardware Runs
nanobosch6 A 20 2.5 10 50 0 0 500 5.0 10 40 60 5 350 30 LF+B100 Click
nb-1.0 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 350 30 LF+B100 Click
nb-1.1 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 350 50 LF+B100 Click
nb-1.2 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 500 50 LF+B100 Click
barcstrip A 20 30 4 (3@15) 0 0 40 200 20 LF+B100 Click
nanobosch7 A 20 2.5 10 50 0 0 500 5.0 10 40 60 5 350 30 LF+B100 Click
LF+B100 Click
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