Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
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|Beam voltage [V] | |Beam voltage [V] | ||
| | |600 | ||
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|Beam accelerator voltage | |Beam accelerator voltage | ||
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|Stage angle [degrees] | |Stage angle [degrees] | ||
| | |5 | ||
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|'''Results''' | |'''Results''' | ||
Revision as of 13:37, 8 November 2012
Results for Si etching in the IBE
Made by Kristian Hagsted Rasmussen @ Nanotech <br\>
Best recipe with respect to the etch profile and low redeposition:
| Parameter | Best Si etching recipe so fare |
|---|---|
| Neutalizer current [mA] | 450 |
| RF Power [W] | 1200 |
| Beam current [mA] | 400 |
| Beam voltage [V] | 600 |
| Beam accelerator voltage | 400 |
| Ar flow to neutralizer [sccm] | 6.0 |
| Ar flow to beam [sccm] | 6.0 |
| Rotation speed [rpm] | 20 |
| Stage angle [degrees] | 5 |
| Results | vvv |
| Etch rate [nm/min] | 15-30? |