Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Si etch: Difference between revisions
| Line 17: | Line 17: | ||
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|Beam voltage [V] | |Beam voltage [V] | ||
| | |600 | ||
|- | |- | ||
|Beam accelerator voltage | |Beam accelerator voltage | ||
| Line 32: | Line 32: | ||
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|Stage angle [degrees] | |Stage angle [degrees] | ||
| | |5 | ||
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|'''Results''' | |'''Results''' | ||