Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
Appearance
| Line 7: | Line 7: | ||
*[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | *[[/Si etch using RIE1 or RIE2|Dry etch using RIE1 or RIE2]] | ||
*[[/Si etch using ASE|Dry etch using ASE]] | *[[/Si etch using ASE|Dry etch using ASE]] | ||
*[[/ASE (Advanced Silicon Etch)|Dry etch using ASE]] | |||
==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | ==Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon== | ||
Revision as of 09:36, 28 November 2007
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
Dry etches:
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
| KOH | PolySilicon etch | RIE | ASE | |
|---|---|---|---|---|
| What is it good for: |
|
|
|
|
| Possible masking materials: |
|
|
|
|
| Etch rate |
|
|
<40nm/min to >600nm/min depending on recipe parameters and mask design | <130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. |
| Size of substrate |
|
4" in our standard bath | 4" (or smaller with carrier) | 6" (when it is set up for 6") and 4" (or smaller if you have a carrier) |
| Batch size |
|
25 wafers at a time | One wafer at a time | One wafer at a time |
| Allowed materials |
|
|
|
|