Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| [[#Results of acceptance test no. 11|11]]||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement. | | [[#Results of acceptance test no. 11|11]]||Measurements of multiple stacks||120 nm nitride on 110 nm oxide on a silicon substrate||Within ±2% on each layer from an ellipsometer measurement. | ||
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| [[#Results of acceptance test no. 12|12]]||Film thickness measurements of transparent films on small structure||Sample material: Si with 1.5 µm patterned AZ-resist||Within ±1% from a standard profiler measurement. | | [[#Results of acceptance test no. 12|12]]||Film thickness measurements of transparent films on small structure||Sample material: Si with 1.5 µm patterned AZ-resist <br/> Measure thickness of AZ-resist on pillars of 50 µm in diameter||Within ±1% from a standard profiler measurement. | ||
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| [[#Results of acceptance test no. 13|13]]||Roughness repeatability||Sample material: Si wafer with poly-silicon layer | | [[#Results of acceptance test no. 13|13]]||Roughness repeatability||Sample material: Si wafer with poly-silicon layer <br/> 3 successive measurements of the roughness ||Repeatability within 0.2% | ||
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