Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| align="center" style="background:#f0f0f0;"|'''Acceptance criteria''' | | align="center" style="background:#f0f0f0;"|'''Acceptance criteria''' | ||
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| [[#Results_of_acceptance_test_no._1,_2_and_3|1]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate | | [[#Results_of_acceptance_test_no._1,_2_and_3|1]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate <br/> Trench depth with aspect ratio 1:10 on a 10 µm wide trench||Depth 100±2 µm | ||
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| [[#Results_of_acceptance_test_no._1,_2_and_3|2]]||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate.||Depth 91±2 µm | | [[#Results_of_acceptance_test_no._1,_2_and_3|2]]||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate.||Depth 91±2 µm | ||