Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
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| ||||Pattern size 20 µm x 20 µm, depth 500 nm|| | | ||||Pattern size 20 µm x 20 µm, depth 500 nm|| | ||
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| 5||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer.||Step height must be within ±3% of a SEM profile measurement. | | [[#Results of acceptance test no. 5|5]]||Flat sample of silicon with thick patterned oxide||Step height of patterned thick (10 µm) oxide on top of a silicon wafer.||Step height must be within ±3% of a SEM profile measurement. | ||
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| ||||7 µm deep pattern, trench width 6 µm|| | | ||||7 µm deep pattern, trench width 6 µm|| | ||