Specific Process Knowledge/Characterization/Profiler/Optical Profiler (Sensofar) acceptance test: Difference between revisions
No edit summary |
|||
| Line 16: | Line 16: | ||
| ||||Trench depth with aspect ratio 1:10 on a 10 µm wide trench|| | | ||||Trench depth with aspect ratio 1:10 on a 10 µm wide trench|| | ||
|- | |- | ||
| 2||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate.||Depth 91±2 µm | | [[#Results_of_acceptance_test_no._1,_2_and_3|2]]||Patterned flat sample of silicon.||Sample material: Patterned silicon substrate.||Depth 91±2 µm | ||
|- | |- | ||
| ||||Trench depth with aspect ratio 1:11 on a 8 µm wide trench|| | | ||||Trench depth with aspect ratio 1:11 on a 8 µm wide trench|| | ||
|- | |- | ||
| 3||Patterned flat sample of silicon||Sample material: Patterned silicon substrate||Depth 85±2 µm | | [[#Results_of_acceptance_test_no._1,_2_and_3|3]]||Patterned flat sample of silicon||Sample material: Patterned silicon substrate||Depth 85±2 µm | ||
|- | |- | ||
| ||||Trench depth with aspect ratio 1:13 on a 6.4 µm wide trench|| | | ||||Trench depth with aspect ratio 1:13 on a 6.4 µm wide trench|| | ||