Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

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 *Isotropic etch
-*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si3N4/Si (>100) and Si3N4/SiO2 (>20) @ 180 C.
+*Well suited for removing all nitride on a wafer surface (nitride strip) without a mask. High selectivity Si<sub>3</sub>N<sub>4</sub>/Si (>100) and Si<sub>3</sub>N<sub>4</sub>/SiO2 (>20) @ 180 C.
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 *Isotropic etch
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 |Etch rate
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-*Stoichiometric Silicon Nitride @ 180 <sup>o</sup>C: ~84 Å/min
+*Si<sub>3</sub>N<sub>4</sub> @ 180 <sup>o</sup>C: ~84 Å/min
-*Stoichiometric Silicon Nitride @ 160 <sup>o</sup>C: ~60 Å/min
+*Si<sub>3</sub>N<sub>4</sub> @ 160 <sup>o</sup>C: ~60 Å/min
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 *PECVD nitride: ~400-1000 Å/min