Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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*Si(100) @60<sup>o</sup>C: ~0.4 µm/min | *Si(100) @60<sup>o</sup>C: ~0.4 µm/min | ||
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*~100-200 nm/min, highly dependent on doping level | |||
|<40nm/min to >600nm/min depending on recipe parameters and mask design | |<40nm/min to >600nm/min depending on recipe parameters and mask design | ||
|<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | |<130nm/min to >5.6 µm/min depending on recipe, mask design and aspect ratio. | ||