Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions
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|Etch rate | |Etch rate | ||
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*Stoichiometric Silicon Nitride @ 180 <sup>o</sup>C: 84 Å/min | *Stoichiometric Silicon Nitride @ 180 <sup>o</sup>C: ~84 Å/min | ||
*Stoichiometric Silicon Nitride @ 160 <sup>o</sup>C: 60 Å/min | *Stoichiometric Silicon Nitride @ 160 <sup>o</sup>C: ~60 Å/min | ||
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*Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | *Typically 40-50 nm/min can be increased or decreased by using other recipe parameters. | ||