Specific Process Knowledge/Thin film deposition: Difference between revisions
| Line 63: | Line 63: | ||
*[[/B3 Furnace LPCVD TEOS|B3 Furnace LPCVD TEOS]] - ''Deposition of silicon oxide'' | *[[/B3 Furnace LPCVD TEOS|B3 Furnace LPCVD TEOS]] - ''Deposition of silicon oxide'' | ||
*[[/B4 Furnace LPCVD PolySilicon|B4 Furnace LPCVD PolySilicon]] - ''Deposition of polysilicon'' | *[[/B4 Furnace LPCVD PolySilicon|B4 Furnace LPCVD PolySilicon]] - ''Deposition of polysilicon'' | ||
*MVD - ''Molecular Vapor Deposition'' | *[[/MVD|MVD]] - ''Molecular Vapor Deposition'' | ||
Revision as of 09:40, 20 November 2007
Choose material to deposit
Metals/elements
| 13 Al Aluminium | 14 Si Silicon | |||||
| 22 Ti Titanium | 24 Cr Chromium | 28 Ni Nickel | 29 Cu Copper | |||
| 46 Pd Palladium | 47 Ag Silver | 50 Sn Tin | ||||
| 73 Ta Tantalum | 74 W Tungsten | 78 Pt Platinum | 79 Au Gold |
Alloys
Dielectrica
- Silicon Nitride - Silicon nitride and silicon oxynitride
- Silicon Oxide
Polymers
- SU8
- Antistiction coating
- Topas
- PMMA
Choose deposition equipment
- Alcatel - E-beam evaporator and sputter tool
- Lesker - Sputter tool
- Leybold - E-beam evaporator and multiple wafer tool
- Wordentec - E-beam evaporator, sputter and thermical evaporator
- Hummer - Gold sputtering system
- PECVD - Plasma Enhanced Chemical Vapor deposition
- B2 Furnace LPCVD Nitride - Deposition of silicon nitrid
- B3 Furnace LPCVD TEOS - Deposition of silicon oxide
- B4 Furnace LPCVD PolySilicon - Deposition of polysilicon
- MVD - Molecular Vapor Deposition