Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions

From LabAdviser
Kn (talk | contribs)
No edit summary
Kn (talk | contribs)
No edit summary
Line 14: Line 14:
{| border="1" cellspacing="0" cellpadding="4"  
{| border="1" cellspacing="0" cellpadding="4"  
!  
!  
! Setting
! Settings 1
! Settings 2
|-  
|-  
| Process type
| Process type
|Sputtering
|Sputtering
|Sputtering
|-  
|-  
| Power
| Power
|130W
|130W
|170W
|-
|-
| Sputter pressure
| Sputter pressure
| 5*10<sup>-2</sup>
| 5*10<sup>-2</sup>
| 5*10<sup>-2</sup>
|-
|-
| Rate
| Rate
| About 0,6Å/s
| About 0,6Å/s  
| About 0,6Å/s  
|-
|-
|}
|}

Revision as of 15:17, 15 August 2012

Silicon sputter

Silicon can be deposited in Wordentec.


Parameters

Listed below are tried parameters, that can be used during deposition.


Please don´t use higher power then 180W, since the target then could breake into a lot of small pieces.

Settings 1 Settings 2
Process type Sputtering Sputtering
Power 130W 170W
Sputter pressure 5*10-2 5*10-2
Rate About 0,6Å/s About 0,6Å/s