Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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*Phospher doped:~20Å/min | *Phospher doped:~20Å/min | ||
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Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in | Dependent on process parameters, but in the order of 1 Å/s. See more [[Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec|here.]] | ||
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