Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

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 |style="background:LightGrey; color:black"|Deposition of silicon nitride
 |style="background:WhiteSmoke; color:black"|Stoichiometry:
-*Si<sub>3</sub>N<sub>4</sub> (only new nitride furnace at the moment)
+*Si<sub>3</sub>N<sub>4</sub> (only 6" nitride furnace at the moment)
-*SRN (only old nitride furnace, only 4" wafers)
+*SRN (only 4" nitride furnace, only 4" wafers)
 Si<sub>3</sub>N<sub>4</sub>: Stoichiometric nitride
@@ Line 31: / Line 31: @@
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Si<sub>3</sub>N<sub>4</sub>: ~50Å - ~1400Å
+*Si<sub>3</sub>N<sub>4</sub>: ~0 - 1400Å
-*SRN: ~50Å - ~2800Å
+*SRN: ~ ~0 - 2800Å
 Thicker layers have to be deposited over more runs
 |-
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 |style="background:LightGrey; color:black"|Nitride thickness uniformity
 |style="background:WhiteSmoke; color:black"|
-New nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
+" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
-*Uniformity within wafer: <3 %
+*Uniformity within wafer: <2.5 %
-*Wafer-to-wafer uniformity: <3 %
+*Wafer-to-wafer uniformity: <4.5 %
 *Run-to-run uniformity: <3 %
-Old nitride furnace (SRN):
+" nitride furnace (SRN):
-*Uniformity within wafer: <4 %
+*Uniformity within wafer: <2.5 %
-*Wafer-to-wafer uniformity: <5 %
+*Wafer-to-wafer uniformity: <6 %
 *Run-to-run uniformity: <3 %
 |-
@@ Line 59: / Line 59: @@
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*780-845 <sup>o</sup>C
+" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
-The process temperature depends on the actual process and vary over the furnace tube
+*780-790 <sup>o</sup>C
+*The process temperature vary over the furnace tube
+" nitride furnace (SRN):
+*830-845 <sup>o</sup>C
+*The process temperature vary over the furnace tube
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*120-200 mTorr
+" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
-The process pressure depends on the actual process
+*200 mTorr
+" nitride furnace (SRN):
+*120 mTorr
 |-
 |style="background:LightGrey; color:black"|Gas flows
 |style="background:WhiteSmoke; color:black"|
-*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 30-80 sccm
+" nitride furnace (Si<sub>3</sub>N<sub>4</sub>):
-*Ammonia (NH<math>_3</math>): 20-120 sccm
+*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 30-33 sccm
-The gas flows depend on the actual process
+*Ammonia (NH<math>_3</math>): 100-120 sccm
+*The gas flows depend on whether nitride is deposited on 4" or 6" wafers
+" nitride furnace (SRN):
+*Dichlorsilane (SiH<math>_2</math>Cl<math>_2</math>): 80 sccm
+*Ammonia (NH<math>_3</math>): 20 sccm
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-New nitride furnace:
+" nitride furnace:
 *1-25 4" or 6" wafers per run
-Old nitride furnace:
+" nitride furnace:
-*1-17 4" wafers per run
+*1-15 4" wafers per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (new wafers or RCA cleaned wafers)
-**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+**with layers of silicon oxide or silicon (oxy)nitride
 **from furnaces in stack A or B in cleanroom 2
 *Pure quartz (fused silica) wafers (RCA cleaned)
 |-
 |}